- 您现在的位置：买卖IC网 > Sheet目录123 > BYV29-600,127 (NXP Semiconductors)DIODE 600 TO-220AC SOD59
 BYV29-600_2 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 24 October 2007 3 of 8 NXP Semiconductors BYV29-600 Recti?er diode ultrafast 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 8 A; Tj = 150 °C; see Figure 2 - 0.97 1.11 V IF = 8 A - 1.12 1.25 V IF = 20 A; see Figure 2 - 1.31 1.45 V IR reverse current VR = 600 V - 2 50 μA VR = 600 V; Tj = 100 °C - 0.1 0.35 mA Dynamic characteristics Qr recovered charge IF =2AtoVR ≥ 30 V; dIF/dt=20A/μs; seeFigure3 - 4070nC trr reverse recovery time IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/μs; see Figure 3 - 5060ns IRM peak reverse recovery current IF = 10 A to VR ≥ 30 V; dIF/dt=50A/μs; Tj= 100°C; seeFigure3 - 3 5.5 A VFR forward recoveryIF= 10 A; dIF/dt=10A/μs; voltage seeFigure4 - 3.2 - V (1) Tj= 150°C; typical values (2) Tj= 150°C; maximum values (3) Tj=25°C; maximum values Fig 2. Forward current as a function of forward voltage 003aab482 0 0 0.4 0.8 1.2 1.6V F (V) 5 10 15 20 25 IF (A) (1) (2) (3) |